CHOPIN
CHOPIN is a DFG funded cooperation between the Laboratory of Semiconductor Microstructure (UNIPRESS) and LAS (KIT).
Inhomogeneous indium concentration is the biggest unsolved scientific problem currently hindering technological progress in the growth of InGaAlN materials system. The aim of the project is to gain a fundamental understanding of the growth and decomposition of InGaN/GaN produced by metal-organic vapor phase epitaxy (MOVPE), thereby determining how the growth parameters for fabrication of InGaN/AlGaN quantum structures for blue and green LEDs and laser diodes can be optimized. In particular, we aim to elucidate the microscopic mechanisms of indium diffusion in the AlInGaN lattice as a function of external parameters (particularly temperature) and internal influences such as lattice strain fields and defect types and concentrations, which, in addition to piezoelectric fields, are essential for the basic understanding of growth, and are also critical unknowns affecting the technology of nitride devices such as LEDs, lasers and transistors.
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In close collaboration with other German MOVPE growth groups (ULM, Bremen), the project partners have designed and constructed a MOVPE growth and characterization laboratory at the KIT Light Source, which is now in the commissioning phase. A key feature of this facility is an in situ mode, complete with gas lines, valves and growth reactor is integrated into the heavy-duty diffractometer of the NANO beamline. |
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Funding & Project Partners
CHOPIN is funded by the Deutsche Forschungsgemeinschaft (DFG) under project no. 426532685 within the Polish-German Funding Initiative. The project partners are:
Prof. Dr. Michal Leszczynski, Institute of High Pressure Physics UNIPRESS, Laboratory of Semiconductor Microstructure (UNIPRESS)
Prof. Dr. Tilo Baumbach, Karlsruhe Institute of Technology, Laboratory for Applications of Synchrotron Radiation (KIT)